Crystal growth and characterization of Cu-based multinary compound semiconductors.
نویسندگان
چکیده
منابع مشابه
Crystal Properties and Growth of Semiconductors
In studying solid state electronic devices we are interested primarily in the electrical behavior of solids. However, we shall see in later chapters that the transport of charge through a metal or a semiconductor depends not only on the properties of the electron but also on the arrangement of atoms in the solid. In the first chapter we shall discuss some of the physical properties of semicondu...
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ii Acknowledgments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .iii Table of
متن کاملSurface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach
We review the surface stability and growth kinetics of III-V and III-nitride semiconductors. The theoretical approach used in these studies is based on ab initio calculations and includes gas-phase free energy. With this method, we can investigate the influence of growth conditions, such as partial pressure and temperature, on the surface stability and growth kinetics. First, we examine the fea...
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ژورنال
عنوان ژورنال: Journal of Advanced Science
سال: 1998
ISSN: 1881-3917,0915-5651
DOI: 10.2978/jsas.10.2-3_194